Optimization of Thick Film Resistors for Low Drift
نویسندگان
چکیده
منابع مشابه
Noise properties of thick-film resistors in extended temperature range
Results of thorough experimental studies on electrical properties of thick-film resistors (TFRs) have been overviewed and summarized. Experiments covered resistance and noise measurements in wide temperature range. Low-frequency noise spectroscopy has been used for the investigations of fluctuating phenomena. Sample resistors were prepared of various combinations of commercial and laboratory-ma...
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The non-linear electro-ultrasonic spectroscopy was used as a non-destructive testing method for the polymer based and cermet thick film resistors evaluation. We carried out the correlation between this method and standard testing methods as noise spectroscopy and the third harmonic voltage measurements. The measuring set-up with the ultrasonic transducer working on the frequency range 10 kHz to...
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ZnO nano-particles have been synthesized by simple chemical route using a starting solution consisting of zinc acetate and citric acid as a surfactant agent. The structural properties of the prepared ZnO nano-particles annealed at different temperatures have been characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM) analyses. The XRD patterns show ZnO-wurtize phase...
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Nowadays, compact and reliable electronic devices including up-to-date ceramic micro-electro-mechanical systems require thick-film resistors with significantly reduced dimensions and stable and precise resistance values. For that reason, instead of standard laser trimming method, high voltage pulse trimming of thick-film resistors is being introduced. This method allows controlled and reliable ...
متن کاملTransport nonuniversality and critical behavior of the piezoresistive response in thick-film resistors
Thick-film resistors (TFRs) consist of a percolating network of conducting oxide nanoparticles dispersed in an insulating glassy matrix, whose resistive properties are dominated by quantum tunneling across insulating layers separating adjacent conducting grains. Tunneling processes are at the origin of the high sensitivity of the TFRs resistances to applied strains. We have measured transport a...
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ژورنال
عنوان ژورنال: ElectroComponent Science and Technology
سال: 1980
ISSN: 0305-3091
DOI: 10.1155/apec.7.87